Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1993-04-23

1994-07-26

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257510, 257515, 257517, 257571, 257619, 257623, 257523, H01L 2961

Patent

active

053329120

ABSTRACT:
A heterojunction bipolar transistor comprises n.sup.+ -type GaAs collector contact region, an n-type GaAs collector region, a p.sup.+ -type GaAs base region, an n-type AlGaAs emitter region, and an n.sup.+ -type InGaAs emitter contact region, all of which are formed on a semiinsulative GaAs substrate. A heterojunction is formed by the base region and the emitter region. The emitter region is formed in mesa shape by dry etching. Around this mesa, B.sup.+ ion-implanted high-resistance region is formed. The base-emitter Junction is isolated from the ion-implanted region. The heterojunction bipolar transistor therefore has little on-voltage changes.

REFERENCES:
patent: 3700978 (1972-10-01), North et al.
patent: 4683487 (1987-07-01), Ueyanagi et al.
IEEE Electron Devices Letters, vol. EDL-8, No. 7; M. F. Chang, et al.; Jul. 1987; pp. 303-305.

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