Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1992-06-19

1993-09-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 76, 257197, 257198, 257 49, H01L 310312, H01L 310256, H01L 31072, H01L 31109

Patent

active

052471926

ABSTRACT:
A heterojunction bipolar transistor comprising a semiconductor substrate of a first conductive-type, a first conductive-type layer of 3c-SiC, a second conductive-type layer of Si and another first conductive-type layer of 3c-SiC. The two first conductive-type layers serve respectively as collector region and emitter region and the second conductive-type layer serves as base region, and a method for producing the same. A transistor of the present invention is effective for devices such as I.sup.2 L circuit wherein reverse directional operation of transistor is utilized.

REFERENCES:
"The Estimate of Base-collector Heterojunction Effect in SiGe base HBT", Mamoru Ugajin and Yoshihito Amemiya, NIT LSI Laboratories, Jan. 27, 1988.

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