Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1992-07-15

1994-02-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257565, 257592, H01L 31072, H01L 31109, H01L 27102

Patent

active

052890201

ABSTRACT:
A heterojunction bipolar transistor includes a first emitter region. A second emitter region extends on the first emitter region and is connected to the first emitter region via a junction. The second emitter region has a forbidden band gap wider than a forbidden band gap of the first emitter region. At the junction, the second emitter region has a carrier energy level substantially equal to a carrier energy level of the first emitter region. An intrinsic base region extends on the second emitter region and has a forbidden band gap narrower than the forbidden band gap of the second emitter region. A collector region extends on the intrinsic base region. An extrinsic base region extends outward of the intrinsic base region and contacts the intrinsic base region and the second emitter region. The extrinsic base region separates from the first emitter region. A portion of the extrinsic base region which adjoins the second emitter region has a forbidden band gap substantially equal to the forbidden band gap of the second emitter region. A high-resistivity region extends underneath the extrinsic base region.

REFERENCES:
patent: 4987468 (1991-01-01), Thornton
"Collector-Up HBT's Fabricated by Be.sup.+ and O.sup.+ Ion Implantations" by Sadao Adachi et al; IEEE Electron Device Letters, vol. EDL-7, No. 1; Jan. 1986; pp. 32-34.

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