Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1990-09-14

1991-05-28

Jackson, Jr., Jerome

357 16, H01L 2972, H01L 29161, H01L 29205

Patent

active

050198904

ABSTRACT:
A heterojunction bipolar transistor includes an emitter layer of a first conductivity type, a base layer of a second conductivity type adjacent to the emitter layer, a collector buffer layer of the first conductivity type, and a collector layer arranged between the collector buffer layer and the base layer. The collector layer includes a first collector layer formed at the side of the base layer and a second collector layer arranged at the side of the collector buffer layer. The first collector layer is a semiconductor layer having an impurity concentration lower than that of the base layer. The second collector layer is a semiconductor layer of the second conductivity type having an impurity concentration higher than that of the first collector layer.

REFERENCES:
patent: 4672413 (1987-06-01), Gardner
"A Proposed Structure for Collector Transit-Time Reduction in AlGaAs/GaAs Bipolar Transistors" by C. M. Maziar et al. (IEEE, Electron Dev. Lett. EDL-7, No. 8, pp. 483-485, 1986).

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