Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1995-11-03
1997-10-28
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257631, 257636, 437235, 437126, 437133, H01L 2973, H01L 2910
Patent
active
056820461
ABSTRACT:
A heterojunction bipolar transistor has a support substrate, a collector layer formed on the support substrate, a base layer formed on the collector layer containing arsenic as group V element, a first emitter layer formed on the base layer, containing phosphorus as group V element, and having a band gap wider than the base layer, an emitter passivation layer formed on the first emitter layer made of semiconductor having a function of passivating the surface of the first emitter layer, and a base electrode forming an ohmic contact with the base layer. The whole upper surface of the base layer is covered with the first emitter layer and base electrode, the whole upper surface of the first emitter layer is covered with the emitter passivation layer, and the region of the first emitter layer adjacent to the edge of the base electrode is depleted throughout the full depth thereof.
REFERENCES:
patent: 5552617 (1996-09-01), Hill et al.
patent: 5557117 (1996-09-01), Matsuoka et al.
patent: 5569944 (1996-10-01), Delaney et al.
patent: 5598015 (1997-01-01), Tanoue et al.
Electronic Letters, Dec. 1992, Dubon-Chevallier et al., vol. 28, Innovative Passivated Heterojunction Bipolar Transistor Grown by CBE.
Extended Abstracts of the 1992 International Conference on Solid State Device and Materials, Tsukuba, 1992, Wu et al., pp. 316-318, High Performance In.sub.0.49 Ga.sub.0.51 P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy.
Joshin Kazukiyo
Sasa Shigehiko
Takahashi Tsuyoshi
Yamada Hiroshi
Fujitsu Limited
Monin Donald
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