Heterojunction bipolar semiconductor device

Details Heterojunction bipolar semiconductor device Heterojunction bipolar semiconductor device

1997-07-25

1999-06-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257195, 257197, 257198, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

059124792

ABSTRACT:
A semiconductor device includes a heterojunction bipolar transistor and a junction gate type field effect transistor which are formed on a semiconductor base. A base region and graft base regions of the heterojunction bipolar transistor, and a channel region and source/drain regions of the junction gate type field effect transistor, are formed of a first semiconductor layer of a first conduction type. The first semiconductor layer is formed of mixed crystals of silicon-germanium which has a higher carrier mobility than silicon. An emitter region of the heterojunction bipolar transistor and a gate region of the junction gate type field effect transistor are formed of a second semiconductor layer of a second conduction type which makes a heterojunction with the first semiconductor layer.

REFERENCES:
patent: 4821090 (1989-04-01), Yokoyama
patent: 5068756 (1991-11-01), Morris et al.
patent: 5391504 (1995-02-01), Hill et al.
patent: 5567961 (1996-10-01), Usagawa
patent: 5583059 (1996-12-01), Burghartz

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