Heterojunction bipolar integrated circuit

Details Heterojunction bipolar integrated circuit Heterojunction bipolar integrated circuit

1986-06-26

1988-04-19

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 34, 357 45, 357 47, 357 49, 307455, H01L 29205, H01L 2972

Patent

active

047393793

ABSTRACT:
A heterojunction bipolar integrated circuit is disclosed which uses a heterojunction bipolar transistor with a heterojunction between an emitter region and a base region. In this transistor, a pn junction between the base region and the emitter region has a greater area than a pn junction between the base region and a collector region. A plurality of such heterojunction bipolar transistors are isolated on a substrate to perform logic operations in an unsaturated region.

REFERENCES:
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Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982, pp. 13-25, IEEE, New York, US; H. Kroemer: "Heterostructure Bipolar Transistors and Integrated Circuits", p. 20, right-hand column, chapter VI--p. 23, left-hand column, line 11 from the bottom.
IEEE Electron Device Letters, vol. EDL-5, No. 3, Mar. 1984, pp. 99-100, IEE, New York, US; C. G. Fonstad: "Consideration of the Relative Frequency Performance Potential of Inverted Heterojunction n-p-n Transistors".
Electronics International, vol. 55, No. 22, Nov. 1982, pp. 93-96, New York, US; D. Buhanan: "CML Scraps Emitter Follower for ECL Speed, Lower Power".
Review of the Electrical Communication Laboratories, vol. 21, No. 9-10, Sep.-Oct. 1973, pp. 571-581, Tokyo, JP; K. Kawashima et al: "Model DL-2H NTL-LSI Evaluation System for Computer Logics", p. 572, left-hand column, line 1--p. 577, right-hand column, line 22; FIGS. 5, 8.

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