Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-04-19
2005-04-19
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S235000, C438S191000, C438S202000, C438S195000, C438S216000, C438S189000, C257S192000, C257S197000, C257S200000, C257S201000, C257S370000, C257S565000, C257S566000, C257S204000
Reexamination Certificate
active
06881976
ABSTRACT:
A BiCMOS semiconductor, and manufacturing method therefore, is provided. A semiconductor substrate having a collector region is provided. A pseudo-gate is formed over the collector region. An emitter window is formed in the pseudo-gate to form an extrinsic base structure. An undercut region beneath a portion of the pseudo-gate is formed to provide an intrinsic base structure in the undercut region. An emitter structure is formed in the emitter window over the intrinsic base structure. An interlevel dielectric layer is formed over the semiconductor substrate, and connections are formed through the interlevel dielectric layer to the collector region, the extrinsic base structure, and the emitter structure. The intrinsic base structure comprises a compound semiconductive material such as silicon and silicon-germanium, or silicon-germanium-carbon, or combinations thereof.
REFERENCES:
patent: 6209122 (2001-03-01), Jyu et al.
patent: 20030197216 (2003-10-01), Kudo
Chan Lap
Chu Shao-fu Sanford
Zheng Jia Zhen
Chartered Semiconductor Manufacturing Ltd.
Graybill David E.
Ishimaru Mikio
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