1990-09-10
1991-07-30
Wojciechowicz, Edward J.
357 13, 357 34, 357 61, H01L 29161
Patent
active
050363727
ABSTRACT:
An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an energy band gap between that of the base layer and that of the emitter layer, a carrier concentration lower than that of the base layer, and a thickness so that the whole spacer layer becomes a depletion layer at thermal equillibrium so that a neutral region is produced in the spacer layer at a voltage lower than the threshold voltage of the emitter-base junction. Thus, the same element is both bistable with the base current as a parameter and has an S-shaped negative differential resistance with the base voltage as a parameter.
REFERENCES:
patent: 4979009 (1990-12-01), Kusano et al.
Shen et al., "Bidirectional Bistability in n-p-n Si/Si.sub.l-x Ge.sub.x /Si Structures", IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988, pp. 453-456.
Abe Yuji
Matsui Teruhito
Ohishi Toshiyuki
Ohisuka Ken-ichi
Sugimoto Hiroshi
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward J.
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