Heterojunction avalanche photodiode

Details Heterojunction avalanche photodiode Heterojunction avalanche photodiode

1984-07-09

1987-08-04

Davie, James W.

357 13, 357 16, H01L 2714, H01L 3100

Patent

active

046849696

ABSTRACT:
An avalanche photodiode comprising an uppermost layer of one conductivity type, a second layer of the other conductivity type wherein the electrons or hole having the greater ionization rate are the minority carriers, a third layer of the second type, having a smaller bandgap than the second layer and wherein the electrons or holes having the greater ionization rate are the majority carriers, and a multi-layer heterojunction structure between the second and third layers comprising alternate layers of the second conductivity type having a bandgap as large as the second layer and layers having a bandgap between those of the second and third layers.

REFERENCES:
Capasso et al., "The Superlattice Photodetector: A New Avalanche Photodiode With a Large Ionization Rates Ratio", Dec., 1981, Conference: International Electron Devices Meeting, pp. 284-287.
Forest et al., "An n-In.sub.0.53 Ga.sub.0.47 As
-InP Rectifier", J. Appl. Phys., 52(9), Sep. 1981, pp. 5838-5842.

Affiliated with

Also associated with

Rating

Heterojunction avalanche photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction avalanche photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction avalanche photodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-886521