Heterogeneous integrated high voltage DC/AC light emitter

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With structure for mounting semiconductor chip to lead frame

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S099000, C257S778000, C257SE25032, C257SE51022, C257SE21511, C368S083000, C368S241000

Reexamination Certificate

active

11040445

ABSTRACT:
A single-chip integrated LED particularly adapted for direct use with a high voltage DC or AC power sources comprises a plurality of electrically isolated LEDs on a generally transparent substrate and bonded to electrically conductive elements on a thermally conductive mount. A reflective coating may be applied to the area between LEDs.

REFERENCES:
patent: 3900863 (1975-08-01), Kim
patent: 5278432 (1994-01-01), Ignatius et al.
patent: 5317170 (1994-05-01), Paoli
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5699073 (1997-12-01), Lebby et al.
patent: 5767581 (1998-06-01), Nakamura et al.
patent: 5773130 (1998-06-01), So et al.
patent: 5877558 (1999-03-01), Nakamura et al.
patent: 5952680 (1999-09-01), Strite
patent: 5955748 (1999-09-01), Nakamura et al.
patent: 5966393 (1999-10-01), Hide et al.
patent: 6054724 (2000-04-01), Ogihara et al.
patent: 6093965 (2000-07-01), Nakamura et al.
patent: 6198405 (2001-03-01), Andersson et al.
patent: 6410940 (2002-06-01), Jiang et al.
patent: 6461019 (2002-10-01), Allen
patent: 6547249 (2003-04-01), Collins et al.
patent: 6936855 (2005-08-01), Harrah
patent: 6957899 (2005-10-01), Jiang et al.
patent: 2002/0006040 (2002-01-01), Kameda et al.
patent: 2002/0043943 (2002-04-01), Menzer et al.
patent: 2004/0080941 (2004-04-01), Jiang
patent: 2005/0185401 (2005-08-01), Jiang et al.
patent: 2005/0253151 (2005-11-01), Sakal et al.
patent: 2005/0254243 (2005-11-01), Jiang et al.
patent: 2006/0180818 (2006-08-01), Nagai et al.
patent: P2004-6582 (2004-01-01), None
Dr. Jing Li, “III-Nitridge Integrated Photonic Devices”, pp. 1-5.
World Standards, “Electricity Around the World”, pp. 1-32.
S X Jin, J Li, J Y Lin and H X Jiang, InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes; Applied Physics Letters, vol. 77, No. 20, p. 3236-3238, Nov. 13, 2000.
Mair et al., Optical properties of GaN/AIGaN multiple quantum well microdisks, Nov. 17, 1997, Appl. Phys. Lett. 76 (5) p. 631, American Institute of Physics.
Jiang and Lin; Advances in iii-Nitride Micro-size light Emitters; Advanced Semiconductor Magazine: vol. 14, No. 5.
Chen, Chang, Chen, Fann, Jiang, and Lin; Mechanism of Photoluminescence in GaN/AI (0.2)Ga(0.8)N Superlattices; Applied Physics Letters, vol. 79, No. 23; Dec. 3, 2001.
Jiang and Lin; On Display; OE Magazine Jul. 2001.
Kansas Researchers Fabricate Blue Micro Light-Emitting Diodes, Paving Way for Microdisplays, Energy Saving Lighting; Ascribe The Public Interest Newswire, Sep. 27, 2001.
Zhaoyang Fan, Hongxing Jiang, Jingyu Lin; Related and Copending U.S. Appl. No. 11/144,982, filed Jun. 3, 2005.
Zhaoyang Fan; Related and Copending U.S. Appl. No. 11/340,296, filed Jan. 26, 2006.
C. W Jeon, H.W. Choi and M.D. Dawson; A Novel Fabrication Method For A 64+64 Matrix-Addressable GaN-Based Micro-LED Array; Phys. Stat. Sol. (a) No. 1, 78-82, 2003.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Heterogeneous integrated high voltage DC/AC light emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterogeneous integrated high voltage DC/AC light emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterogeneous integrated high voltage DC/AC light emitter will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3726998

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.