Heterogeneous conformal CVD of arsenosilicate glass

Details Heterogeneous conformal CVD of arsenosilicate glass Heterogeneous conformal CVD of arsenosilicate glass

1985-01-16

1988-03-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437982, 437187, 437275, 357 54, 357 63, H01L 29167, H01L 2978, H01L 2195

Patent

active

047313463

ABSTRACT:
The use of arsenosilicate glass (ASG) as a dielectric layer in semiconductors, and methods of producing arsenosilicate glasses as conformal coatings are described. The ASG coatings may be produced as the result of heterogeneous reactions involving silane, arsine and oxygen. In multilevel semiconductors ASG may be used over the polysilicon gates 3, over aluminum metallization 5 and second dielectric layer 6, and/or over second metallization 7.

REFERENCES:
patent: 4319260 (1982-03-01), Tasch, Jr. et al.
patent: 4355454 (1982-10-01), Tasch, Jr.
patent: 4535528 (1985-08-01), Chen et al.
patent: 4548671 (1985-10-01), Kosonocky et al.
Wilkes, "Low Pressure Processes in Chemical Vapour Deposition of Silicon Oxides", J. Crystal Growth, 70 (1984), pp. 271-279.
Kern et al., "Optimized Chemical Vapor Deposition of Borophosphosilicate Glass Films", RCA Review, vol. 46, Jun. 1985, pp. 117-153.
Middlehoek et al., "SiO.sub.2 Deposition Using Mixtures of SiH.sub.4, O.sub.2 and A", CVD 5th Int. Conf., 1975, pp. 19-29.
Kern et al., "Advances in Deposition Processes for Passivation Films", J. Vac. Sci. Technol., vol. 14, No. 5, Sep./Oct. 1977, pp. 1082-1099.
Levin et al., "The Step Coverage of CVD SiO.sub.2 Glass Films", Materials Letters, vol. 1, No. 1, Jun. 1982, pp. 29-32.
Mattson, "CVD Films for Interlayer Dielectrics", Solid State Technology, Jan. 1980, pp. 60-64.
Adams, "Plasma Planarization", Solid State Technology, Apr. 1981, pp. 178-181.
Kern, "Chemical Vapor Deposition Systems for Glass Passivation of Integrated Circuits", Solid State Technology, Dec. 1975, pp. 25-33.
Amick et al., "Chemical Vapor Deposition Techniques . . . ", 2nd Int. Conf. of Electrochem. Soc., 1970, pp. 551-570.
Ghondi, VLSI Fabrication Principles, Silicon and Gallium Arsenide, John Wiley and Sons, New York, 1983, pp. 424-427, 582-585.
Journal of the Electrochemical Society, vol. 120, No. 1, Jan. 1983, M. Chezzo et al., "Arsenic Glass Source Diffusion in Si and SiO.sub.2 ", pp. 110-116.

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