Heterogeneous composite semiconductor structures for...

Details Heterogeneous composite semiconductor structures for... Heterogeneous composite semiconductor structures for...

2006-06-13

2006-06-13

Menefee, James (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046014

Reexamination Certificate

active

07061955

ABSTRACT:
The present invention creates oxide and air apertures in material systems, such as InP, that do not usually accommodate epitaxial incorporation of highly oxidizing materials, such as AlAs, of sufficient thickness to adequately provide optical as well as current aperturing. A composite structure of relatively slowly oxidizing layer or layers (e.g. AlInAs on InP) with a faster-oxidizing layer or layers (e.g. AlAs on InP) can be used to produce oxide and air apertures of various shapes and sizes, and to also increase the oxidation rate.

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Iwai et al., “High Performance 1.3-um InAsP Strained-Layer Quantum-Well ACIS (Al-Oxide Confined Inner Stripe) Lasers,” IEE Journal of Selected Topics in Quantum Electronics, vol. 5, No. 3, May/Jun. 1999, pp. 694-700.
Naone et al., “Oxidation of AlGaAs Layers for Tapered Apertures in Vertical-Cavity Lasers,” Electronics Letters, vol. 33, No. 4, Feb. 1997, pp. 300-301.

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