Heteroepitaxy of germanium silicon on silicon utilizing alloying

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148177, 148180, 156612, 156DIG64, 156DIG67, 156DIG105, 357 16, H01L 21228

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active

043571832

ABSTRACT:
A method and apparatus is described for producing Ge or a Ge.sub.1-x Si.sub.x heteroepitaxy film on Si by depositing films of Ge or Ge.sub.1-x Si.sub.x on Si and subjecting the body so formed to a controlled temperature environment, wherein the body is rapidly (within a time period t.sub.o of more than about 100 microseconds) brought to a predetermined temperature within the alloy range of the deposited film but less than the melting point of Si. The body is then held at such temperature for a relatively short time not to exceed about 3 minutes, including the time period t.sub.o.

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