Heteroepitaxy by growth of thermally strained homojunction super

Details Heteroepitaxy by growth of thermally strained homojunction super Heteroepitaxy by growth of thermally strained homojunction super

1989-08-03

1993-02-02

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437112, 437132, 437976, H01L 21203, H01L 21205

Patent

active

051837765

ABSTRACT:
Preferred embodiments disclose include methods of fabrication and integrated circuits (30) in GaAs layers (38, 40) on silicon substrates (32) with the gallium arsenide grown by MBE or MOCVD and containing thermally-strained superlattices (36) and post-growth high temperature annealing to lower defect density. The annealing confines dislocations to a thin network at the interface of the GaAs buffer layer (34) and the silicon substrate (32).

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