Heteroepitaxial selective-area growth through insulator windows

Details Heteroepitaxial selective-area growth through insulator windows Heteroepitaxial selective-area growth through insulator windows

1987-09-08

1990-04-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG48, 148DIG72, 148DIG154, 156603, 156613, 437 99, 437132, 437226, 437973, H01L 2120

Patent

active

049140531

ABSTRACT:
Preferred embodiments include growth of GaAs on insulator-masked silicon; the GaAs is single crystal over the silicon but polycrystalline over the insulator. A post=growth anneal extends the single crystal region over the insulator for distances of 2-4 .mu.m.

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