Heteroepitaxial growth method for gallium nitride

Details Heteroepitaxial growth method for gallium nitride Heteroepitaxial growth method for gallium nitride

2005-03-11

2009-10-20

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S089000, C117S095000, C117S101000

Reexamination Certificate

active

07604697

ABSTRACT:
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.

REFERENCES:
patent: 6033490 (2000-03-01), Kimura et al.
patent: 08-264439 (1996-10-01), None
patent: H08-264439 (1996-10-01), None

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