Heteroepitaxial growth method

Details Heteroepitaxial growth method Heteroepitaxial growth method

1989-05-02

1991-05-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG25, 148DIG72, 148DIG97, 148DIG154, 156613, 437 81, 437108, 437126, 437973, 437976, H01L 2120

Patent

active

050195298

ABSTRACT:
A heteroepitaxial growth method wherein a III-V group compound semiconductor is formed on a silicon substrate. A first amorphous III-V group compound semiconductor layer is formed on the silicon substrate before forming a III-V group compound semiconductor crystal layer on the amorphous III-V group compound semiconductor layer. A second amorphous III-V group semiconductor layer having a thickness greater than the crystal layer is formed on the III-V group compound semiconductor crystal layer and subjected to a solid phase epitaxial growth whereby the second amorphous III-V group compound semiconductor layer is made a single crystalline layer.

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