Heteroepitaxial displays

Details Heteroepitaxial displays Heteroepitaxial displays

1975-12-17

1976-10-05

Rutledge, L. Dewayne

Metal treatment

Stock

Ferrous

148175, 156612, 357 17, 357 19, 357 49, 357 50, 357 61, H01L 2926, H01L 3112, H01L 2184

Patent

active

039848574

ABSTRACT:
A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal semiconductor, such as gallium phosphide. The preselected electroluminescent semiconductor material is then epitaxially deposited in single crystal form on the modified surface of the silicon wafer, a step which is not feasible without the modification of the silicon wafer surface. Preferably, the modification is achieved by epitaxially depositing a thin layer of semiconductor material whose lattice structure offers a substantially smaller disparity with the structure of the electroluminescent material than the existing disparity between the silicon wafer and the electroluminescent material.

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Chang, I. F., "Fet-Bipolar Integration".
IBID., vol. 14, No. 1, June 1971, pp. 350-351.
Burmeister et al., "Epitaxial Growth of GaAs.sub.1-x P.sub.x On Germanium Substrates" Trans. Metallurgical Soc., Aime, vol. 245, Mar. 1969, pp. 565-569.

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