Heteroepitaxial deposition of gap on silicon substrates

Details Heteroepitaxial deposition of gap on silicon substrates Heteroepitaxial deposition of gap on silicon substrates

1977-09-16

1978-10-17

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 148 15, 156610, 156612, 156613, 357 16, 357 17, 357 61, H01L 21205, H01L 21302, H01L 2926

Patent

active

041207068

ABSTRACT:
A crack free layer of GaP is epitaxially deposited on a silicon phosphide surface of a silicon substrate having an (III) orientation. The silicon substrate is prebaked on a carbide coated susceptor with palladium diffused hydrogen at about 1200.degree. C and pretreated with phosphine at about 1140.degree. C to form the silicon phosphide surface. The temperature is lowered to 800.degree.-900.degree. C in the presence of phosphine and trimethyl gallium is introduced at a ratio of 1 to 10 with the phosphine. Cracks in the gallium phosphide are prevented by roughing the bottom non-phosphide surface of the silicon substrate such that the roughed surface is under compressive stress and induces tensile stress on the phosphided surface to reduce the compressive stress reduced by gallium phosphide layer when the substrate is annealed at about 1200.degree. C.

REFERENCES:
patent: 3699401 (1972-10-01), Tietjen et al.
patent: 3766447 (1973-10-01), Mason
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 3985590 (1976-10-01), Mason
Beck et al., "Crystallography of SiP . . . in Si" J. Applied Physics, vol. 37, No. 13, Dec. 1966, pp. 4683-4687.
Thomas; R. W., "Growth of Single Crystal GaP . . . Sources" J. Electrochem. Soc., vol. 116, No. 10, Oct. 1969, pp. 1449-1450.
Kemlage; B. M., "Deposition of GaP Heteroepitaxy on Silicon" I.B.M. Tech. Discl. Bull., vol, 18, No. 6, Nov. 1975, p. 1852.
Andre' et al., "Heteroepitaxial Growth of GaP on Silicon" J. Crystal growth 31 (1975), pp. 147-157.

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