Heterocycloalkyl-substituted naphthalene-based...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257SE51050

Reexamination Certificate

active

07858970

ABSTRACT:
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.

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patent: 2006-045165 (2006-02-01), None
patent: 2005/092901 (2005-10-01), None
Green et al, “Intramolecular Photoinduced Electron Transfer from Nitroxyl Radicals,” J. Phys. Chem. 1995, 99, 14752-14757.
Laquindanum et al, “n-Channel Organic Transistor Materials Based on Naphthalene Frameworks,” J. Am. Chem. Soc., 1996, 118, 11331-11332.
Katz et al, “A soluble and air-stable organic semiconductor with high electron mobility,” Letters to Nature, vol. 404, Mar. 30, 2000, 478-481.
U.S. Appl. No. 11/567,954, filed Dec. 7, 2006, Shukla et al.
U.S. Appl. No. 11/285,238, filed Nov. 22, 2005, Shukla et al.

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