Heterobipolar transistor and method of fabricating the same

Details Heterobipolar transistor and method of fabricating the same Heterobipolar transistor and method of fabricating the same

2006-10-10

2006-10-10

Flynn, Nathan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S019000, C257S198000, C257S199000, C257S020000, C438S235000, C438S309000, C438S317000

Reexamination Certificate

active

07119382

ABSTRACT:
The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.

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