Hetero-structure variable silicon rich nitride for multiple...

Details Hetero-structure variable silicon rich nitride for multiple... Hetero-structure variable silicon rich nitride for multiple...

2007-12-17

2009-10-13

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE29309, C257S325000

Reexamination Certificate

active

07602067

ABSTRACT:
Charge storage stacks containing hetero-structure variable silicon richness nitride for memory cells and methods for making the charge storage stacks are provided. The charge storage stack can contain a first insulating layer on a semiconductor substrate; n charge storage layers comprising silicon-rich silicon nitride on the first insulating layer, wherein numbers of the charge storage layers increase from the bottom to the top and a k-value of an n−1th charge storage layer is higher than a k-value of an nth charge storage layer; n−1 dielectric layers comprising substantially stoichiometric silicon nitride between each of the n charge storage layers; and a second insulating layer on the nth charge storage layers.

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International Search Report for International Application No. PCT/US2008/086913 dated Mar. 23, 2009.
Written Opinion of the International Searching Authority for International Application No. PCT/US2008/086913 dated Mar. 23, 2009.

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