Hetero-junction type bipolar transistor

Details Hetero-junction type bipolar transistor Hetero-junction type bipolar transistor

1994-11-30

1996-09-17

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257 77, H01L 310328, H01L 310336, H01L 310312

Patent

active

055571182

ABSTRACT:
A hetero-junction type bipolar transistor has an SiGe layer as a base layer and an SiC layer as an emitter layer. Between the SiGe layer and the SiC layer of the hetero-junction bipolar transistor, a monocrystalline layer having a lattice constant between the lattice constant of SiGe and that of SiC.

REFERENCES:
patent: 5075743 (1991-12-01), Behfar-Rad
patent: 5144398 (1992-09-01), Morishita

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