Hetero junction semiconductor device

Details Hetero junction semiconductor device Hetero junction semiconductor device

1979-07-09

1981-03-03

Edlow, Martin H.

357 2, 357 59, 357 61, 357 4, H01L 29161

Patent

active

042544297

ABSTRACT:
A hetero junction semiconductor device having at least one inter-semiconductor hetero junction, which has at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap and a third non-single-crystal semiconductor region serving as the hetero junction formed to extend between the first and second semiconductor regions and having an energy gap continuously changing from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and in which the first, second and third semiconductor regions are doped with recombination center neutralizers.

REFERENCES:
patent: 3564353 (1971-02-01), Corak
patent: 3716844 (1973-02-01), Brodsky
patent: 3821773 (1974-06-01), Mize
patent: 4016586 (1977-05-01), Merrin
patent: 4024558 (1977-05-01), Merrin

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