Hetero-junction light-emitting diode

Details Hetero-junction light-emitting diode Hetero-junction light-emitting diode

1981-02-09

1983-11-08

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 372 50, H01L 3300, H01L 29161, H01S 3319

Patent

active

044145586

ABSTRACT:
The emission efficiency of a hetero-junction light-emitting diode is improved by raising the carrier concentration in the radiative region, and by increasing the thickness of the radiative region. On p.sup.+ type GaAs substrate, a p type Ga.sub.1-x Al.sub.x As (0.30<.times.<0.37) layer and an n type Ga.sub.1-y Al.sub.y As (0.40<y<0.70) layer are grown. The emission efficiency are optimized when

REFERENCES:
patent: 4001055 (1977-01-01), Charmakadze et al.
patent: 4122486 (1978-10-01), Ono et al.
patent: 4131904 (1978-12-01), Ladany et al.
patent: 4137107 (1979-01-01), Nijman et al.
patent: 4218692 (1980-08-01), de Cremoux
patent: 4296425 (1981-10-01), Nishizawa
R. Blondeau et al., "Viellissement accelere et degradation des diodes electroluminescentes a double heterostructure (GaAl)As-GaAs", Revue de Physique Appliquee, vol. 14, (1979), pp. 563-567.

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