Hetero junction bipolar transistor with reduced surface recombin

Details Hetero junction bipolar transistor with reduced surface recombin Hetero junction bipolar transistor with reduced surface recombin

1991-08-02

1993-11-30

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257197, 257586, H01L 2972, H01L 2973

Patent

active

052668304

ABSTRACT:
According to the present invention, the hetero junction bipolar transistor (HBT) is provided which includes an emitter layer consisting of a first semiconductor of a first conductive type and being in mesa form; a base layer being in contact with the emitter layer and consisting of a second semiconductor of a second conductive type having a narrower band gap than the first semiconductor; and a collector layer being in contact with the base layer and consisting of a third semiconductor of a first conductive type having a broader band gap than the second semiconductor. In this HBT, a monolayer sulfur film is formed so as to cover the exposed periphery of the heterointerface between the emitter layer and the base layer.

REFERENCES:
patent: 3677837 (1972-07-01), Ashar
patent: 4942142 (1990-07-01), Itozaki et al.
patent: 4982250 (1991-01-01), Manos et al.
Nottenburg et al., Applied Physic Letters (1988) 52(3); 218-220.
Shikata et al., "Suppression of the emitter size effect on the current gain of AlGaAs/GaAs HBT by utilizing (NH.sub.4).sub.2 SX treatment".

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