Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Patent
1990-11-19
1994-03-22
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
257565, 257571, 257584, 257587, 257618, 257623, H01L 2972, H01L 2906
Patent
active
052967336
ABSTRACT:
A hetero junction bipolar transistor provides a contact area an area between an emitter (or collector) electrode and a wiring formed on the electrode that is larger than that of the emitter (or collector). A variation in voltage applied to an emitter (or collector)-base junctions is prevented and a stable operation of the transistor is attained. In addition, when an etching operation is carried out, an insulation film is formed on a side part of a mask. A patterning of the emitter (or collector) is then carried out and thus an emitter (or collector) having a size approximate to that of the mask is formed.
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"Effect of Emitter-Base Spacing on the Current Garin of AlGaAs/GaAs Heterojunction Bipolar Transistors", W-S. Lee, IEEE Electron Device Letters, May 1989, vol. 10, No. 5, pp. 200-202.
"Low Resistance Refractory Ohmic Contact to p+ GaAs and p+ AlGaAs TLM Determination of p+ GaAs/p+ AlGaAs Contact Resistance", P. Rabinzohn et al., Ext. Abs. of the 20th Conf. on Solid State Devices and Materials, Aug. 24-26, 1988, pp. 287-290.
Kawata Masahiko
Kusano Chushiroh
Masuda Hiroshi
Mitani Katsuhiko
Miyazaki Masaru
Hitachi , Ltd.
James Andrew J.
Wallace Valencia M.
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