Hetero junction bipolar transistor with improved electrode wirin

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface

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257565, 257571, 257584, 257587, 257618, 257623, H01L 2972, H01L 2906

Patent

active

052967336

ABSTRACT:
A hetero junction bipolar transistor provides a contact area an area between an emitter (or collector) electrode and a wiring formed on the electrode that is larger than that of the emitter (or collector). A variation in voltage applied to an emitter (or collector)-base junctions is prevented and a stable operation of the transistor is attained. In addition, when an etching operation is carried out, an insulation film is formed on a side part of a mask. A patterning of the emitter (or collector) is then carried out and thus an emitter (or collector) having a size approximate to that of the mask is formed.

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