Hetero-junction bipolar transistor having AlGaAsP emitter layer

Details Hetero-junction bipolar transistor having AlGaAsP emitter layer Hetero-junction bipolar transistor having AlGaAsP emitter layer

1996-02-22

1998-06-16

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257 76, 257191, 257196, 257615, 257623, H01L 2920, H01L 2906, H01L 310304, H01L 3526

Patent

active

057675406

ABSTRACT:
A hetero-junction bipolar transistor comprising a collector layer, a base layer and an emitter layer formed stepwise in this order wherein the emitter layer comprises a plurality of layers including an AlGaAs layer, and a passivation layer is formed at a stepwise portion between the base layer and the emitter layer, and of a material having a bandgap larger than that of the base layer, and provided with a phosphide layer on the surface thereof.

REFERENCES:
patent: 5132764 (1992-07-01), Bayraktaroglu
patent: 5298439 (1994-03-01), Liu et al.
patent: 5345097 (1994-09-01), Nakagawa
patent: 5412233 (1995-05-01), Dubon-Chevallier et al.
Zwicknagl et al., "High-Speed Non-Self Aligned GaZnp/GaAs-TEBT", Electronics Letters, vol. 28, No. 3, Jan. 30, 1992, pp. 327-328.
Takahashi et al., "High-Reliability InGaP/GaAs HBTs Fabricated by Self-Aligned Process" IEDM 94 (Dec. 1994) pp. 191-194.
Japanese Laid-Open Patent No. HEI 2-98937 (11 Apr. 1990).
Lu, S.S., "High-Current-Gain Ga.sub.0.51 In.sub.0.49 P/GaAs Heterojunction Bipolar Transistor Grown by Gas-Source Molecular Beam Epitaxy" IEEE Electron Device Letters (1992) 13(4):214-216.

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