Hetero-junction bipolar transistor having a high switching speed

Details Hetero-junction bipolar transistor having a high switching speed Hetero-junction bipolar transistor having a high switching speed

1985-01-30

1987-06-02

James, Andrew J.

357 16, 357 61, H01L 2972

Patent

active

046707670

ABSTRACT:
The bipolar transistor comprises an emitter of a first semiconductor, a base of a second semiconductor and a collector of a third semiconductor, the first semiconductor having edges of conduction and valence bands positioned outside the energy band gap of the second semiconductor, and the third semiconductor having an edge of conduction band for majority carriers positioned inside the energy band gap of the second semiconductor and an edge of valence band for majority carriers positioned outside the energy band gap of the second semiconductor.

REFERENCES:
patent: 4173763 (1979-11-01), Chang et al.
Kroemer, "Heterostructure Bipolar Transistors and Integrated Ckts", Proc. IEEE, vol. 70, No. 1, Jan. 1982.
Laod, Jr., "Performance Potential of High-Frequency Heterojunct Transistors", IEEE Trans. on Ele. Dev., vol. ED-17, No. 5, 5/1970.

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