Hetero-junction bipolar transistor and semiconductor devices usi

Details Hetero-junction bipolar transistor and semiconductor devices usi Hetero-junction bipolar transistor and semiconductor devices usi

1994-12-15

1997-01-28

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257588, H01L 310328, H01L 310336, H01L 27082

Patent

active

055980155

ABSTRACT:
A hetero-junction bipolar transistor having an emitter composed of a semiconductor having a wider forbidden band width than that of a semiconductor constituting a base is disclosed. In the transistor, the emitter and the electrode leader area composed of a single crystalline semiconductor are provided being extended from the upper part of the emitter to the surface of the base through an insulating layer, for the purpose of making it possible to miniaturize the transistor and to operate the transistor at a high-speed by decreasing the emitter resistance.

REFERENCES:
patent: 4768074 (1988-08-01), Yoshida et al.
patent: 4868418 (1989-08-01), Imamura et al.
patent: 4903104 (1990-02-01), Kawai et al.
patent: 4979009 (1990-12-01), Kusano et al.
patent: 5017517 (1991-05-01), Mochizuki et al.
patent: 5099299 (1992-03-01), Fang
patent: 5296733 (1994-03-01), Kusano et al.
"Double Heterojunction GaAs-GaAlAs Bipolar Hamsistors Grown by MOCVD For Emitter Coupled Logic"; Dubon et al, IEEE 1983; IEDM pp. 689-693.
Boylestad et al.--"Electronic Devices and Circuit Theory, " 1982; p. 586.

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