Hetero-junction bipolar transistor and manufacturing method...

Details Hetero-junction bipolar transistor and manufacturing method... Hetero-junction bipolar transistor and manufacturing method...

2005-06-07

2005-06-07

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257S201000

Reexamination Certificate

active

06903388

ABSTRACT:
A hetero-junction bipolar transistor that satisfies high resistance required to avoid a potential breakdown includes: an n-type sub-collector layer110that is made of GaAs; an n-type first collector121that is made of a semiconductor material with a smaller avalanche coefficient than that of the sub-collector110and is formed on the sub-collector layer110; a second collector layer132that is made of n-type or i-type GaAs with lower dopant concentration than that of the sub-collector layer110and is formed on the first collector layer121; a p-type base layer133that is made of GaAs and is formed on the second collector layer132; and emitter layer134that is made of a semiconductor material with a larger band gap than that of the base layer133and is formed on the base layer133.

REFERENCES:
patent: 4958208 (1990-09-01), Tanaka
patent: 5903018 (1999-05-01), Shimawaki
patent: 6525349 (2003-02-01), Hartmann
patent: 6800880 (2004-10-01), Tsai
patent: 6809400 (2004-10-01), Harmon et al.
patent: 2003/0136956 (2003-07-01), Niwa et al.
patent: 2000-260783 (2000-09-01), None

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