Hetero-junction bipolar transistor

Details Hetero-junction bipolar transistor Hetero-junction bipolar transistor

1996-03-14

1998-02-17

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257197, 257198, H01L 310328

Patent

active

057194157

ABSTRACT:
A hetero-junction bipolar transistor includes: a substrate; a first conductive type collector layer disposed on the substrate; a second conductive type base layer having an external base region; and a first conductive type emitter layer having a bandgap larger than the bandgap of the base layer disposed in this order, wherein the emitter layer includes a first emitter layer, an etching stop layer, and a second emitter layer disposed in this order starting from the substrate side; a base electrode is formed on the etching stop layer or the first emitter layer disposed on the external base region; a region of the first emitter layer on the base layer has a thickness such that the region is substantially depleted at all voltages applied when the transistor is normally operated; the second emitter layer has an electron affinity equal to or smaller than an electron affinity of the first emitter layer; and the etching stop layer has an electron affinity larger than the electron affinity of the first emitter layer, and has a thickness of approximately 3 nm.

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