Hetero-junction bipolar transistor

Details Hetero-junction bipolar transistor Hetero-junction bipolar transistor

1990-06-25

1991-03-26

Carroll, J.

357 4, 357 16, H01L 2712, H01L 29161, H01L 2972

Patent

active

050033662

ABSTRACT:
The present invention provides a hetero-junction bipolar transistor (HBT) whichis so designed that the emitter injection efficiency is improved, the base transit time and base resistance are reduced and yet the lowering of the collector injection efficiency is suppressed, by forming at least one quantum well in a base region of the HBT and determining the width of one of the quantum levels formed in the quantum well and the energy in a barrier layer constituting the quantum well is within kT/2.

REFERENCES:
patent: 4503447 (1985-03-01), Iafiate et al.
patent: 4816878 (1989-03-01), Kano et al.
patent: 4849799 (1989-07-01), Capasso et al.

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