Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-01-11
2011-01-11
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000, C257S196000, C257SE29246
Reexamination Certificate
active
07868355
ABSTRACT:
A hetero field effect transistor includes: a main semiconductor region including a first semiconductor layer and a second semiconductor layer formed thereon to allow a generation of a two-dimensional carrier gas layer of a first conductive type on a heterojunction interface therebetween; a source electrode formed on the main semiconductor region; a drain electrode formed on the main semiconductor region and separated from the source electrode; a third semiconductor layer of a second conductive type different from the first conductive type, the third semiconductor layer being formed on the second semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode formed on the third semiconductor layer. A concave portion is formed in an upper surface of the second semiconductor layer at a region immediately below the gate electrode.
REFERENCES:
patent: 2007/0170463 (2007-07-01), Ueno et al.
patent: 2006339561 (2006-12-01), None
patent: 2007019309 (2007-01-01), None
Sanken Electric Co. Ltd.
Tran Thien F
Wilmer Cutler Pickering Hale and Dorr LLP
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