Hetero-epitaxially grown compound semiconductor substrate and a

Details Hetero-epitaxially grown compound semiconductor substrate and a Hetero-epitaxially grown compound semiconductor substrate and a

1989-04-25

1992-07-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437132, 437133, 437976, H01L 2120

Patent

active

051302691

ABSTRACT:
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

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