Hetero-epitaxially grown compound semiconductor substrate

Details Hetero-epitaxially grown compound semiconductor substrate Hetero-epitaxially grown compound semiconductor substrate

1994-01-21

1996-01-16

Kunemund, Robert

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

257190, 257200, H01L 2712

Patent

active

054846641

ABSTRACT:
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

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