Hetero-epitaxial liquid phase growth method

Details Hetero-epitaxial liquid phase growth method Hetero-epitaxial liquid phase growth method

1990-08-14

1992-07-14

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437126, 437128, 437130, 148DIG101, H01L 21208

Patent

active

051302705

ABSTRACT:
A hetero-epitaxial liquid phase growth method for growing a compound semiconductor by liquid phase epitaxy includes placing a melt in a closed melt boat on a substrate and epitaxially growing a first thin film, opening the melt boat while the melt remains in a melted state for a predetermined time to evaporate a component of the melt, and epitaxially growing a second thin film on the first thin film from the melt from which the component has been evaporated.

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patent: 4798812 (1989-01-01), Wilson
patent: 4906325 (1990-03-01), Bernardi

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