Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Patent
1992-10-16
1994-10-18
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
437105, 437107, 437126, 437132, 437133, 437130, 437 89, 437 91, 117 95, 117 99, 117934, 117953, H01L 2120
Patent
active
053565096
ABSTRACT:
A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconductor. When used in conjunction with a growth mask, the method is also adapted to selective area epitaxy.
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Barnett Allen M.
Terranova Nancy
AstroPower, Inc.
Breneman R. Bruce
Paladugu Ramamohan Rao
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