Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-05-19
1994-04-05
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 76, 257 78, 257200, 257613, 257614, 257615, 257627, H01L 2904
Patent
active
053007930
ABSTRACT:
A hetero crystalline structure consisting of semiconductor materials of a zincblende-structure and wurtzite-structure. For example, formed on a semiconductor substrate having a crystal face of (100) of the zincblende structure is a semiconductor material of the wurtzite-structure in its bulk state as a film of the same zincblende-structure as the semiconductor substrate.
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Kajimura Takashi
Kondow Masahiko
Minagawa Shigekazu
Crane Sara W.
Hitachi , Ltd.
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