Hetero crystalline structure and semiconductor device using it

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 76, 257 78, 257200, 257613, 257614, 257615, 257627, H01L 2904

Patent

active

053007930

ABSTRACT:
A hetero crystalline structure consisting of semiconductor materials of a zincblende-structure and wurtzite-structure. For example, formed on a semiconductor substrate having a crystal face of (100) of the zincblende structure is a semiconductor material of the wurtzite-structure in its bulk state as a film of the same zincblende-structure as the semiconductor substrate.

REFERENCES:
patent: 3927385 (1975-12-01), Pratt, Jr.
patent: 4122407 (1978-10-01), VanVechten
patent: 4439399 (1984-03-01), Hawrylo
patent: 4697202 (1987-09-01), Sher
patent: 4774194 (1988-09-01), Hokuyou
patent: 4795501 (1989-06-01), Stanbery
patent: 4866489 (1989-08-01), Yokogawa et al.
Mizuta et al "Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine" Jap J Appl. Phys. vol. 25 (12) Dec. 1986, pp. L945-L948.
Kittel "Introduction to Solid State Physics" 5th Ed. Chapter 1, pp. 26-28 (.COPYRGT.1976) John Wiley & Sons, ed N.Y.
Fujita et al "Cubic ZnCdS Lattice-Matched to GaAs: A Novel material for Short-Wavelength Optoelectronic Applications" Jap. J. Appl Phys vol. 28, No. 6, Jun. 1989, pp. L898-L900.
Kittel "Introduction to Solid State Physics" Chapter 18 Dislocations and Crystal Growth J. Wiley & Sons, Ed. N.Y. 5th Edition p. 585.
Kukimoto, H. Proceeding of the 29th Spring 1982 meeting of Japan Society of Applied Physics and Related Societies (J.S. Appl. Phys) Tokyo 4E5, p. 748,
Ghandhi, S. K. "VLSI Fabrication Principles" J. Wiley & Sons Inc. N.Y. (1983) pp. 12-14.
Sze, S. M. "Physics of Semiconductor Devices" (2nd Ed.) John Wiley & Sons Inc. N.Y. (1982) pp. 848.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hetero crystalline structure and semiconductor device using it does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hetero crystalline structure and semiconductor device using it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hetero crystalline structure and semiconductor device using it will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-513568

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.