Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2011-01-25
2011-01-25
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257S064000, C257SE29003, C438S489000, C977S790000, C977S825000
Reexamination Certificate
active
07875884
ABSTRACT:
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.
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Kobayashi Nobuhiko
Wang Shih Yuan
Hewlett--Packard Development Company, L.P.
Ho Tu-Tu V
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