Hetero-bipolar transistor having a plurality of emitters

Details Hetero-bipolar transistor having a plurality of emitters Hetero-bipolar transistor having a plurality of emitters

1994-08-25

1996-10-01

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257 25, H01L 310328, H01L 310336, H01L 2906

Patent

active

055613063

ABSTRACT:
A hetero-bipolar transistor includes a collector layer of a first conductivity type, a base layer of a second conductivity type provided on the collector layer, a first emitter structure of the first conductivity type provided on the base layer, and a second emitter structure of the first conductivity type and provided on the base layer, wherein the first and second emitter structures are doped with respect to the base layer, with a sufficiently high impurity concentration level such that a Zener breakdown occurs at the p-n junction formed between the base layer and the first or second emitters upon application of a reverse bias voltage.

REFERENCES:
patent: 4672414 (1987-06-01), Gabriel et al.
patent: 5280182 (1994-01-01), Waho
patent: 5329144 (1994-07-01), Luryi
patent: 5389804 (1995-02-01), Yokoyama et al.
patent: 5461245 (1995-10-01), Gribnikov et al.

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