Hetero-augmentation of semiconductor materials

Details Hetero-augmentation of semiconductor materials Hetero-augmentation of semiconductor materials

1985-05-06

1987-09-22

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136258, 20415745, 20415746, 423346, 427 35, 427 39, 427 531, 427 541, H01L 21365

Patent

active

046953310

ABSTRACT:
Hetero-augmentation of semiconductor materials by reacting a mixture of (1) a gaseous precursor of a host semiconductor with (2) a gaseous compound of the host and a hetero atom. The host precursor is a semiconductor hydride or a mixture of hydrides, including those of silicon and germanium. The compound of the host and hetero-atom includes a silyl or germyl dopant or alloyant. Suitable dopants are phosphorous, arsenic, and nitrogen. Suitable alloyants are other semiconductors and nitrogen. The reaction can take place pyrolytically, by electrical discharge, or photochemically.

REFERENCES:
patent: 4385199 (1983-05-01), Hamakawa et al.
patent: 4564533 (1986-01-01), Yamazaki
patent: 4569855 (1986-02-01), Matsuda et al.
patent: 4585671 (1986-04-01), Kitagawa et al.
T. Inoue et al., Apply. Phys. Lett., vol. 44, pp. 871-873 (May 1984).
T. Tanaka et al., Appl. Phys. Lett., vol. 45, pp. 865-867 (Oct. 1984).

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