Hermetically sealed semiconductor inertial sensor

Measuring and testing – Speed – velocity – or acceleration – Structural installation or mounting means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S704000

Reexamination Certificate

active

06289732

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to electronic devices, and, more particularly, to an hermetically sealed semiconductor inertial sensor.
BACKGROUND OF THE INVENTION
Inertial sensors are used in various applications, such as, for example, in the automobile field to control various devices, such as air bags, anti-lock braking systems (ABS), active suspensions, or in other fields, such as consumer electronics, electronic processors and the like. Inertial sensors are operable to measure a mechanical quantity, for example, related to a movement of the sensor (such as its acceleration) and to produce an output signal as a function of this quantity. One particular type of inertial sensor, which is extremely small and very reliable, is that made on a microscopic scale (micro sensors) on a chip of semiconductor material. Inertial sensors of this type are based on the displacement of a sensing element, movable with respect to the chip, the movement of which is converted into a suitable electrical signal. Preferably, a circuit for processing the output signal produced by the sensor should also be integrated onto this chip.
In semiconductor inertial sensors the sensitive element must be suitably isolated by enclosing it in a sealed structure in such a way as to ensure that it operates in a controlled environment. This allows the sensitive element, which has a very small mass, to move with low resistance and minimum damping to guarantee good sensitivity of the sensor. Moreover, the circuit for processing the output signal from the sensor requires encapsulation in a suitable container or package which protects the processing circuit from the external environmental conditions thereby guaranteeing its correct operation.
One method for hermetically enclosing a semiconductor inertial sensor includes encapsulating it with the associated circuitry in a sealed container, such as, for example, a ceramic or metal container. This technique, however, is extremely expensive, which converts into a high cost of the finished product because the cost of the container represents the major proportion of the overall costs.
A different known technique includes producing a hollow structure on the microscopic scale (micro cavity) to house the sensing element. This isolating method involves the micro-working of a wafer of silicon or glass which is then connected to the wafer on which the inertial sensors are formed, for example, by means of an anodic bonding technique. This method makes it possible to use standard plastic containers of low cost for encapsulating the final product. The above described known arrangement is nevertheless rather expensive and has the disadvantage of not allowing the sensor and the associated processing circuitry to be integrated onto the same chip so that the connection step requires that the surfaces to be joined are perfectly planar (with a peak-to-trough roughness of the order of tens of Å)
SUMMARY OF THE INVENTION
In view of the foregoing background, it is therefore an object of the present invention to provide an hermetically sealed inertial sensor which is simple in construction, reliable and economical to manufacture. This and other objects of the present invention are provided by an inertial sensor comprising a chip of semiconductive material, a movable sensing element on a surface of the chip; and a hollow structure enclosing the sensing element. More particularly, the hollow structure preferably comprises a metal wall disposed on the surface of the chip, and a closure plate fixed to the metal wall.
The hermetic sealing of the inertial sensor of the present invention can be made at the wafer level without requiring micro-working of a further silicon or glass wafer and subsequent connection operations. This inertial sensor makes it possible also to integrate the processing circuitry onto the same chip and, possibly, to use a plastic container which is therefore extremely economical, to encapsulate the final product.


REFERENCES:
patent: 4314225 (1982-02-01), Tominaga et al.
patent: 4399707 (1983-08-01), Wamstad
patent: 4528583 (1985-07-01), te Velde et al.
patent: 4670092 (1987-06-01), Motamedi
patent: 5111693 (1992-05-01), Greiff
patent: 5164328 (1992-11-01), Dunn et al.
patent: 5168344 (1992-12-01), Ehlert et al.
patent: 5259247 (1993-11-01), Bantien
patent: 5285690 (1994-02-01), Koen et al.
patent: 5438859 (1995-08-01), Yamashita et al.
patent: 5650567 (1997-07-01), Ueda et al.
patent: 5719334 (1998-02-01), Parsons
patent: 5723904 (1998-03-01), Shiga
patent: 5750926 (1998-05-01), Schulman et al.
patent: 5864063 (1999-01-01), Otani et al.
patent: 96103569.8 (1996-07-01), None
patent: 0773443 (1997-05-01), None
patent: WO 96/39632 (1996-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hermetically sealed semiconductor inertial sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hermetically sealed semiconductor inertial sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hermetically sealed semiconductor inertial sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2461165

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.