Hermetically sealed microwave integrated circuit package with gr

Details Hermetically sealed microwave integrated circuit package with gr Hermetically sealed microwave integrated circuit package with gr

1994-10-17

1996-11-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257664, 257729, 333238, H01L 2940, H01L 2306, H01P 308

Patent

active

055743137

ABSTRACT:
A hermetically sealed microwave integrated circuit (MIC) includes a motherboard with a ground plane of aluminum-silicon alloy, a plastic/ceramic composite dielectric layer, and a copper-nickel-gold upper layer. The alloy for the ground plane is selected to allow fusion with aluminum containing less than 1% silicon to create a hermetic seal. The ground plane is fashioned to beyond the interior and upper layers, forming a welding flange that circumscribes the perimeters of the interior and upper layers. Recesses are cut into the dielectric to expose the ground plane. Active devices and microwave integrated circuits (MICs) are disposed within the recesses and mounted on the ground plane. The metallized upper layer is etched and patterned to create a microwave integrated circuit. The alloy flange is laser-welded to the annular lower surface of a frame made of aluminum containing less than 1% silicon, so that the interior plastic layer, the metallized upper layer, and all active devices are within the frame. A cover is made from an aluminum-silicon alloy that is selected to fuse with aluminum containing less than 1% silicon, so as to form a hermetic seal. The cover is laser welded to the upper annular surface of the frame. When both the flange and the cover are fused with the frame, the active devices are hermetically sealed within the frame.

REFERENCES:
patent: 5109594 (1992-05-01), Sharp et al.

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