Hermetically sealed microelectronic device and method of forming

Details Hermetically sealed microelectronic device and method of forming Hermetically sealed microelectronic device and method of forming

1994-10-03

2000-10-03

Kincaid, Kristina

Electricity: conductors and insulators

Boxes and housings

Hermetic sealed envelope type

257633, 257649, 257650, H05K 506

Patent

active

061276294

ABSTRACT:
A microelectronic device is hermetically sealed at the wafer level. A substrate is provided having associated electronics and at least one metal bonding pad. A dielectric layer, such as pyrex glass film, is sputter deposited atop the substrate to form a glass/metal seal. A glass film is thereafter planarized, preferably by chemical-mechanical polishing, to remove surface variations. A cover wafer is thereafter anodically bonded to the dielectric layer/glass film so as to define a sealed cavity for housing and protecting the substrate electronics. The resultant microelectronic device is packaged in its own hermetically sealed container at the wafer level.

REFERENCES:
patent: 3669734 (1972-06-01), Jacob et al.
patent: 3755720 (1973-08-01), Kern
patent: 4191905 (1980-03-01), Yasuda et al.
patent: 4464419 (1984-08-01), Horn
patent: 4701826 (1987-10-01), Mikkor
patent: 4716082 (1987-12-01), Ahearn et al.
patent: 4773972 (1988-09-01), Mikkor
patent: 4995149 (1991-02-01), Arvikar et al.
patent: 5141148 (1992-08-01), Ichiyawa

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