Hermetic semiconductor enclosure

Electricity: conductors and insulators – Feedthrough or bushing – Compression

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357 72, 357 73, 357 75, 174 505, 174 5051, 174 5052, 361331, 361380, 361381, H01L 2302, H01J 1500

Patent

active

049050753

ABSTRACT:
A semiconductor hermetic package for semiconductor device comprises base, sidewall and cover members. Signals can be coupled between the enclosed devices and external devices by coupling means including conductive regions disposed in and through the package. Light pipes or conductive tracks and paths extending through the package can be used to couple the signals. A portion of the package can function as a grading resistance.

REFERENCES:
patent: 3588632 (1971-06-01), Nakata
patent: 3688018 (1972-08-01), Hiscocks
patent: 3908187 (1975-09-01), Sheldon et al.
patent: 3909332 (1975-10-01), Yerman
patent: 3925808 (1975-12-01), Rai-Choudhury
patent: 3975758 (1976-08-01), Schlegel
patent: 4024569 (1977-05-01), Hawrylo et al.
patent: 4032960 (1977-06-01), Anthony et al.
patent: 4092614 (1978-05-01), Sakuma et al.
patent: 4109273 (1978-08-01), Glasl et al.
patent: 4129243 (1978-12-01), Cusano et al.
patent: 4170490 (1979-10-01), Anthony et al.
patent: 4280854 (1981-07-01), Shibata et al.
patent: 4427993 (1984-01-01), Fichot et al.
patent: 4430793 (1984-02-01), Hart
patent: 4476483 (1984-10-01), van de Ven et al.
patent: 4628147 (1986-12-01), Bennett
patent: 4677454 (1987-06-01), Kryohara
patent: 4745455 (1988-05-01), Glascock, II et al.
Anthony, T. R., "Forming Electrical Interconnections through Semiconductor Wafers", Journal of Applied Physics, 52(8), Aug. 1981, pp. 5340-5349.
Anthony, T. R., "Diodes Formed by Laser Drilling and Diffusion", Journal of Applied Physics, 53(12), Dec. 1982, pp. 9154-9164.

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