Hermetic sealing of a substrate of high thermal conductivity usi

Details Hermetic sealing of a substrate of high thermal conductivity usi Hermetic sealing of a substrate of high thermal conductivity usi

1997-01-31

1999-08-31

Williams, Alexander Oscar

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Entirely of metal except for feedthrough

257704, 257705, 257720, 257766, 257762, 257772, H01L 2308, H01L 2302, H01L 2348

Patent

active

059457350

ABSTRACT:
The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.

REFERENCES:
patent: 4020987 (1977-05-01), Hascoe
patent: 4656499 (1987-04-01), Butt
patent: 4827082 (1989-05-01), Horiuchi et al.
patent: 4985753 (1991-01-01), Fujioka et al.
patent: 5138426 (1992-08-01), Umeda et al.
patent: 5159432 (1992-10-01), Ohkubo et al.
patent: 5463248 (1995-10-01), Yano et al.

Affiliated with

Also associated with

Rating

Hermetic sealing of a substrate of high thermal conductivity usi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hermetic sealing of a substrate of high thermal conductivity usi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hermetic sealing of a substrate of high thermal conductivity usi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427092