Hermetic sealing of a substrate of high thermal conductivity usi

Details Hermetic sealing of a substrate of high thermal conductivity usi Hermetic sealing of a substrate of high thermal conductivity usi

1997-01-31

2000-03-14

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

438106, 438118, H01L 2328

Patent

active

060371935

ABSTRACT:
The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.

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