Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Entirely of metal except for feedthrough
Reexamination Certificate
2006-11-14
2006-11-14
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Entirely of metal except for feedthrough
C257S704000, C257S705000, C257S707000, C257S709000
Reexamination Certificate
active
07135768
ABSTRACT:
Ultrasonically formed seals, their use in semiconductor packages, and methods of fabricating semiconductor packages. A brittle center member (such as glass) has a molded edge member. That edge member is ultrasonically welded to a body. The molded edge member and body are comprised of ultrasonically weldable materials. A hermetically sealed semiconductor package includes a lid with a brittle center plate and a molded edge. The molded edge is ultrasonically welded to a body. Locating features that enable accurate positioning of the lid relative to the body, and energy directors can be included. Pins having a relieved portion and a protruding portion can also be hermetically sealed to the body. Such pins can have various lengths that enable stadium-type pin rows. The pins can be within channels, which can hold a sealant. The body can include a device that is electrically connected to the pins.
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Crane, Jr. Stanford W.
Doty Matthew E.
Jeon Myoung-Soo
Erdem Fazli
Flynn Nathan J.
McKenna Long & Aldridge LLP
Silicon Bandwidth Inc.
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